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2SD834 Datasheet (2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor

Manufacturer: TGS

Download the 2SD834 datasheet PDF. This datasheet also includes the 2SD880 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2SD880_TGS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD834
Manufacturer TGS
File Size 75.51 KB
Description (2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor
Download 2SD834 Download (PDF)

General Description

It is intented for use in power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max.

Operating Junction Temperature Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 60 60 7 3.0 0.5 30 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 ( Ta = 25 C) ELECTRICAL CHARACTERISTICSBAG Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=4V, IC=1.0A VCE=4V, IC=3.0A 60 25 10 50 1.0 1.0 3 V V MHz Min.

Overview

TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834.