2SD834 Datasheet

The 2SD834 is a (2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor.

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Part Number2SD834
ManufacturerTGS
Overview It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C. t http://www.datasheet4u.com/ .
Part Number2SD834
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High DC Current Gain : hFE= 1500(Min) @ IC= 2A, VCE= 2V ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A ·Wide Area of Safe Operation ·High Reliability ·Minimum Lot-to-Lot variations for robust. red trademark isc Silicon NPN Darlington Power Transistor 2SD834 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 180 V V(BR)CEO Collector-Emitter Breadkown Voltage IC.
Part Number2SD834
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220 package ·High DC current gain ·DARLINGTON ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·Electronic ignitor ·Relay and solenoid drivers. uctor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-em.