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2SD834 - (2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor

Download the 2SD834 datasheet PDF. This datasheet also covers the 2SD880 variant, as both devices belong to the same (2sd880 / 2sd834) npn silicon epitaxial power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

It is intented for use in power amplifier and switching applications.

Max.

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Note: The manufacturer provides a single datasheet file (2SD880_TGS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SD834
Manufacturer TGS
File Size 75.51 KB
Description (2SD880 / 2SD834) NPN Silicon Epitaxial Power Transistor
Datasheet download datasheet 2SD834 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TIGER ELECTRONIC CO.,LTD 2SD880 / 2SB834 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 60 60 7 3.0 0.5 30 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 ( Ta = 25 C) ELECTRICAL CHARACTERISTICSBAG Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=4V, IC=1.