Datasheet Details
| Part number | MJE3055T |
|---|---|
| Manufacturer | TGS |
| File Size | 65.89 KB |
| Description | Complementary Silicon Power Ttransistors |
| Datasheet |
 MJE3055T Datasheet
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| Part number | MJE3055T |
|---|---|
| Manufacturer | TGS |
| File Size | 65.89 KB |
| Description | Complementary Silicon Power Ttransistors |
| Datasheet |
MJE3055T Datasheet
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It is intented for use in power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max.
Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 60 V 5V 10 A 6A 75 W 150 oC -55~150 oC TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current ICEO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO hFE(1) hFE(2) IC=100mA, IB=0 VCE=4V, IC=4.0A VCE=4V, IC=10.0A Collector-Emitter Saturation Voltage VCE(sat) IC=4.0A,IB=400mA IC=10.0A,IB=3.3A Base-Emitter Saturation Voltage VBE(sat) VCE=4V,IC=4.0A Current Gain Bandwidth Product f
TIGER ELECTRONIC CO.,LTD E Product specification Complementary Silicon Power Ttransistors MJE3055T /.
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MJE3055T | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
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MJE3055T | NPN Transistor | INCHANGE |
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MJE3055T | NPN Silicon Transistor | Fairchild |
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MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
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MJE3055T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
| Part Number | Description |
|---|---|
| MJE13009 | NPN Silicon Power Transistors |
| MJE2955T | Complementary Silicon Power Ttransistors |