| Part Number | MJE3055T Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
• High Current Gain.
* High Current Gain * Bandwidth Product * These Devices are Pb *Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO . |
MJE3055T Datasheet and Specifications PDF
The MJE3055T is a Complementary Silicon Plastic Power Transistors.
| Part Number | MJE3055T Datasheet |
|---|---|
| Description | NPN Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base . = 4A, IB = 0.4A IC = 10A, IB = 3.3A VCE = 4V, IC = 4A VCE = 10V, IC = 500mA 2 20 5 Min. 60 Max. 700 1 5 5 100 1.1 8 1.8 V V V MHz Units V µA mA mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter On Voltage Current Gain Bandwidth Product * Pulse test:. |
| Part Number | MJE3055T Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | STMicroelectronics |
| Overview | The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 3 . . |
| Part Number | MJE3055T Datasheet |
|---|---|
| Description | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE2955T/D
Complementary Silicon Plastic Power Transistors
MJE2955T * NPN MJE3055T *
*Motorola Preferred Device
PNP
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ.
bol VCEO VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Adc Adc Collector *Emitter Voltage Collector *Base Voltage Emitter *Base Voltage Collector Current Base Current 5.0 10 6.0 75 Total Power Dissipation @ TC = 25_C Derate above 25_C MJE3055T, MJE2955T Operating and Storage Junction Temperature Range PD†. |