• Part: MJE3055T
  • Description: Complementary Silicon Power Ttransistors
  • Category: Transistor
  • Manufacturer: TGS
  • Size: 65.89 KB
Download MJE3055T Datasheet PDF
TGS
MJE3055T
MJE3055T is Complementary Silicon Power Ttransistors manufactured by TGS.
DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage VCBO 70 V Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Storage Temperature VCEO VEBO IC IB Ptot Tj Tstg 60 V 5V 10 A 6A 75 W 150 o C -55~150 o C TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Symbol Test Conditions Collector Cut-off Current ICEO VCB=60V, IE=0 Emitter Cut-off Current IEBO VEB=5V, IC=0 Collector-Emitter Sustaining Voltage DC Current Gain VCEO h FE(1) h FE(2) IC=100m A, IB=0 VCE=4V, IC=4.0A VCE=4V, IC=10.0A Collector-Emitter Saturation Voltage VCE(sat) IC=4.0A,IB=400m A IC=10.0A,IB=3.3A Base-Emitter Saturation Voltage VBE(sat) VCE=4V,IC=4.0A Current Gain Bandwidth Product...
MJE3055T reference image

Representative MJE3055T image (package may vary by manufacturer)