Datasheet Details
| Part number | MJE3055T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.09 KB |
| Description | NPN Transistor |
| Datasheet | MJE3055T-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJE3055T.
| Part number | MJE3055T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.09 KB |
| Description | NPN Transistor |
| Datasheet | MJE3055T-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
MJE3055T | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
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MJE3055T | NPN Silicon Transistor | Fairchild |
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MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
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MJE3055T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJE3055T | HIGH VOLTAGE TRANSISTOR | UTC |
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