| Part number | MJE3055T |
|---|---|
| Datasheet | MJE3055T-INCHANGE.pdf |
| File Size | 206.09 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·plement to Type MJE2955T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJE3055T | Complementary Silicon Plastic Power Transistors | ON Semiconductor |
 |
MJE3055T | NPN Silicon Transistor | Fairchild |
 |
MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
 |
MJE3055T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
 |
MJE3055T | HIGH VOLTAGE TRANSISTOR | UTC |
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