Part MJE3055T
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 206.09 KB
Inchange Semiconductor

MJE3055T Overview

MJE3055T reference image

Representative MJE3055T image (package may vary by manufacturer)

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) - High DC Current Gain- : hFE= 20-100@IC= 4A - Complement to Type MJE2955T - Minimum Lot-to-Lot variations for robust device performance and reliable operation.