Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)
- High DC Current Gain-
: hFE= 20-100@IC= 4A
- plement to Type MJE2955T
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general-purpose amplifier and switching...
