MJE3055AT
MJE3055AT is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
- High DC Current Gain-
: hFE= 150-260@IC= 1A
- Bandwidth Product-
: fT = 2MHz(Min)@IC = 500 mA
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general-purpose amplifier and switching...
