Part MJE3055AT
Description Silicon NPN Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 213.97 KB
Inchange Semiconductor

MJE3055AT Overview

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) - High DC Current Gain- : hFE= 150-260@IC= 1A - Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA - Minimum Lot-to-Lot variations for robust device performance and reliable operation.