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MJE3055AT - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) High DC Current Gain- : hFE= 150-260@IC= 1A Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general-

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isc Silicon NPN Power Transistor MJE3055AT DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150-260@IC= 1A ·Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.