Datasheet Details
| Part number | MJE3055AT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.97 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJE3055AT-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor MJE3055AT.
| Part number | MJE3055AT |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.97 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJE3055AT-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150-260@IC= 1A ·Bandwidth Product- : fT = 2MHz(Min)@IC = 500 mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE3055AT ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5uA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE3055A | Complementary Silicon power transistors | nELL |
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MJE3055 | NPN SILICON POWER TRANSISTOR | DIGITRON |
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MJE3055 | NPN Transistor | INCHANGE |
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MJE3055 | NPN Silicon Transistor | Fairchild |
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MJE3055 | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
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