MJE3055AT Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150-260@IC= 1A ·Bandwidth Product-.
MJE3055AT is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Nell Power Semiconductor |
MJE3055A | Complementary Silicon power transistors |
DIGITRON |
MJE3055 | NPN SILICON POWER TRANSISTOR |
Inchange Semiconductor |
MJE3055 | NPN Transistor |
Fairchild |
MJE3055 | NPN Silicon Transistor |
STMicroelectronics |
MJE3055 | COMPLEMENTARY SILICON POWER TRANSISTORS |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min) ·High DC Current Gain- : hFE= 150-260@IC= 1A ·Bandwidth Product-.