MJE3055TG Description
MJE2955T (PNP), MJE3055T (NPN) plementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications.
MJE3055TG Key Features
- High Current Gain
- Bandwidth Product
- These Devices are Pb-Free and are RoHS pliant
- 75 WATTS
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 12
- Collector Cutoff Current (VCE = 70 Vdc, VEB(off) = 1.5 Vdc) (VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150°C)
- mAdc 700
- mAdc 5.0
- Collector-Emitter Saturation Voltage (Note 2)