MJE3055TG - Complementary Silicon Plastic Power Transistors

onsemi

Download the MJE3055TG datasheet PDF. This datasheet also covers the MJE2955T variant, as both devices belong to the same complementary silicon plastic power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

High Current Gain.
Bandwidth Product.
These Devices are Pb.
Free and are RoHS Compliant.

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MJE3055TG complementary silicon plastic power transistors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MJE2955T_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MJE3055TG
Manufacturer	onsemi
File Size	58.12 KB
Description	Complementary Silicon Plastic Power Transistors
Datasheet	MJE3055TG Datasheet

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Other Datasheets by onsemi

Part Number	Description
MJE3055T	Complementary Silicon Plastic Power Transistors
MJE340	Plastic Medium-Power NPN Silicon Transistor
MJE340G	NPN Silicon Transistor
MJE350G	Plastic Medium-Power PNP Silicon Transistor
MJE371G	PNP Silicon Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO 60 VCB 70 VEB 5.0 IC 10 IB 6.0 PD (Note 1) 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.