TXY8205 Description
FEATURES High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) RATINGS Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Current (continuous) at TC = 100 ℃ IDM (b) Drain Current (pulsed) Ptot Total Dissipation at TC = 25 ℃ Tstg Storage Temperature Tj Max.