* High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Curre
TXY8205
TMOS
470.50 KB
Dual n-channel high density trench mosfet.
TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35mΩ@VGS=2.5V ID 6A 4A Green Product Pin Descript.
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