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TXY8205A - Dual N-CHANNEL High Density Trench MOSFET

Features

  • High density cell trench design for low RDS(ON) Rugged and reliable Surface mount package Lead Free available(Green Product) PIN.

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Datasheet Details

Part number TXY8205A
Manufacturer TMOS
File Size 720.21 KB
Description Dual N-CHANNEL High Density Trench MOSFET
Datasheet download datasheet TXY8205A Datasheet

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TXY8205 Dual N-CHANNEL High Density Trench MOSFET

Full PDF Text Transcription

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Dual N-Channel High Density Trench MOSFET N TYPE BVDSS - TXY8205A 20V ID 6A RDS(ON) (Typ.) () 23mΩ @VGS=4.5V 34mΩ @VGS=2.5V FEATURES High density cell trench design for low RDS(ON) Rugged and reliable Surface mount package Lead Free available(Green Product) PIN CONFIGURATION TXY8205A ORDERING INFORMATION Device Package TXY8205A TSSOP-8 Packing Tape Reel www.tmos.com.tw 1 DS-Rev-1.4 TXY8205A ABSOLUTE MAXIMUM RATINGS (TA = 25 ℃ unless otherwise specified) Symbol Parameter Value VDSS Drain-Source Voltage (VGS=0V ) - 20 VGSS ID (a) Gate- source Voltage - Drain Current (continuous) at TC = 25℃ at TC = 70℃ ±12 6 4 IDM (b) Drain Current (pulsed) 28 Power Dissipation Ptot 2.
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