TMOS TXY8205A
Dual N-CHANNEL High Density Trench MOSFET
FEATURES
特点 High density cell trench design for low RDS(ON) 高密度沟槽式单元超低导通电阻设计 Rugged and reliable 坚固可靠 Surface mount package 表面黏着包装形式 Lead Free available(Green Product) 无铅或绿色产品 PIN CONFIGURATION 管脚说明及内部电路图 TXY8205A ORDERING INFORMATION 订购信息 Device Package 器件名称 封装形式 TXY8205A TSSOP-8 Packing 包装形式 Tape Reel 1 DS-Rev-1.4 TXY8205AABSOLUTE MAXIMUM RATINGS
绝对最大额定值 (TA = 25 ℃ unless otherwise specified) Symbol Parameter Value 符号 参数描述 最大限定值 VDSS Drain-Source Voltage (VGS=0V ) 漏极-源极击穿电压 20 VGSS ID (a) Gate- source Voltage 栅极-源极击穿电压 Drain Current (continuous) 连续漏极电流 at TC = 25℃ at TC = 70℃ ±12 6 4 IDM (b) Drain Current (pulsed) 浪涌漏极电流 28 Power Dissipation Ptot 功耗 2.0 Tj , Tstg Operating Junction and Storage Temperature Range 工作与储存温度 - 55~150 (a) Current limited by package 包装之电流极限 (b) Pulse test: Pulse width≦300us, duty cycle≦2% 脉冲测试:脉冲宽度≦300us,占空比≦2% THERMAL DATA 热特性 RθJA Thermal Resistance – Junction to Ambient 结-环境热阻 62.5 Unit 单位 V A W ℃ ℃ /WELECTRICAL CHARACTERISTICS
电器特性 (TA = 25 ℃ unless ot...