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TXY8205A Datasheet Dual N-channel High Density Trench MOSFET

Manufacturer: TMOS

Overview: Dual N-Channel High Density Trench MOSFET 双 N 沟道高密度场效应晶体管 TYPE 器件型号 BVDSS 漏-源极电压 TXY8205A 20V ID 电流 6A RDS(ON) (Typ.) 导通电阻 (典型值) 23mΩ @VGS=4.5V 34mΩ @VGS=2.

Datasheet Details

Part number TXY8205A
Manufacturer TMOS
File Size 720.21 KB
Description Dual N-CHANNEL High Density Trench MOSFET
Datasheet TXY8205A-TMOS.pdf

Key Features

  • 特点 High density cell trench design for low RDS(ON) 高密度沟槽式单元超低导通电阻设计 Rugged and reliable 坚固可靠 Surface mount package 表面黏着包装形式 Lead Free available(Green Product) 无铅或绿色产品 PIN.

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Part Number Description
TXY8205 Dual N-CHANNEL High Density Trench MOSFET

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