TMOS TXY8205
Dual N-CHANNEL High Density Trench MOSFET
| Part No. | TXY8205 |
|---|---|
| Datasheet | TXY8205 Download |
| Manufacturer | TMOS |
| Description | Dual N-CHANNEL High Density Trench MOSFET |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product)ABSOLUTE MAXIMUM RATINGS
Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Current (continuous) at TC = 100 ℃ IDM (b) Drain Current (pulsed) Ptot Total Dissipation at TC = 25 ℃ Tstg Storage Temperature Tj Max. Operating Junction Temperature (a) Current limited by package (b) Pulse width limited by safe operating area THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient 1 TSOP 6 / SOT 23-6 Value 20 ±12V 6 2.4 24 1.25 - 55~175 Unit V V A A A W ℃ Max 100 ℃ /W DS-Rev-1.0 TXY8205ELECTRICAL CHARACTERISTICS
(Tcase = 25 ℃ unless otherwise specified) OFF Symbol Parameter Test Conditions Min Typ Max Unit BVDSS Drain-source Breakdown Voltage ID = 250 uA , VGS = 0V 20 V IDSS Zero Gate Voltage Drain Current (VGS = 0V) VDS = 16V 1 uA IGSS Current (VDS = 0V) VGS =± 1...
