Datasheet4U Logo Datasheet4U.com

TXY8205 - Dual N-CHANNEL High Density Trench MOSFET

Features

  • High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product).

📥 Download Datasheet

Datasheet Details

Part number TXY8205
Manufacturer TMOS
File Size 470.50 KB
Description Dual N-CHANNEL High Density Trench MOSFET
Datasheet download datasheet TXY8205 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by TMOS

Part Number Description
TXY8205A Dual N-CHANNEL High Density Trench MOSFET

Full PDF Text Transcription

Click to expand full text
TXY8205 Dual N CHANNEL High Density Trench MOSFET TYPE TXY8205 BVDSS 20V RDS(ON) 25mΩ@VGS=4.5V 35mΩ@VGS=2.5V ID 6A 4A Green Product Pin Description FEATURES High Density cell trench design for low Rds(on) Rugged and reliable Surface Mount package Lead Free Available(Green Product) ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDSS Drain-Source Voltage ( VGS=0V ) VGSS Gate- source Voltage ID (a) Drain Current (continuous) at TC = 25 ℃ ID Drain Current (continuous) at TC = 100 ℃ IDM (b) Drain Current (pulsed) Ptot Total Dissipation at TC = 25　℃ Tstg Storage Temperature Tj Max. Operating Junction Temperature (a) Current limited by package (b) Pulse width limited by safe operating area THERMAL DATA Rthj-amb Thermal Resistance Junction-ambient www.tmos.com.
Published: |