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T431616B - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Description

The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clockcycle .

Features

  • +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and self refresh 32ms refresh period (2K cycle) MRS cycle with address key programs - CAS Latency ( 1 & 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) Available package type in 50 pin TSOP(II) 1M x 16 SDRAM 512K x 16bit x 2Banks Syn.

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Datasheet Details

Part number T431616B
Manufacturer TMT
File Size 569.06 KB
Description 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Datasheet download datasheet T431616B Datasheet

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  • T431616E - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Full PDF Text Transcription

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tm • • • • • • • • • TE CH T431616B SDRAM FEATURES +2.7 to +3.6V power supply Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock Burst Read Single-bit Write operation DQM for masking Auto refresh and self refresh 32ms refresh period (2K cycle) MRS cycle with address key programs - CAS Latency ( 1 & 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) Available package type in 50 pin TSOP(II) 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM GRNERAL DESCRIPTION The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .
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