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T431616A - 1M x 16 SDRAM

General Description

The T431616A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle .

Key Features

  • 3.3V power supply.
  • Clock cycle time : 6 / 7 / 8 / 10 ns.
  • Dual banks operation.
  • LVTTL compatible with multiplexed address.
  • All inputs are sampled at the positive going edge of system clock.
  • Burst Read Single-bit Write operation.
  • DQM for masking.
  • Auto refresh and self refresh.
  • 32ms refresh period (2K cycle).
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full pag.

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Datasheet Details

Part number T431616A
Manufacturer TM
File Size 1.57 MB
Description 1M x 16 SDRAM
Datasheet download datasheet T431616A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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tm TE CH SDRAM FEATURES • 3.3V power supply • Clock cycle time : 6 / 7 / 8 / 10 ns • Dual banks operation • LVTTL compatible with multiplexed address • All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Auto refresh and self refresh • 32ms refresh period (2K cycle) • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) • Available package type in 50 pin TSOP(II) and 60-pin CSP.