T431616E Description
The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits.
T431616E Key Features
- Fast clock rate: 200/166/143 MHz
- Self refresh mode: standard and low power
- Internal pipelined architecture
- 512K word x 16-bit x 2-bank
- Programmable Mode registers
- CAS# Latency: 1, 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: interleaved or linear burst
- Burst stop function
- Individual byte controlled by LDQM and UDQM