T431616E - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

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TMT

T431616E 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM by TMT - Datasheet Preview — Datasheet preview – T431616E

Datasheet Details

Part number	T431616E
Manufacturer	TMT
File Size	759.46 KB
Description	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Datasheet	T431616E Datasheet
Note	This datasheet PDF includes multiple part numbers: T431616E, T431616D. Please refer to the document for exact specifications by model.
Additional preview pages of the T431616E datasheet.

Product details

Description

The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits.

It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).

Features

Fast access time: 5/6/7 ns.
Fast clock rate: 200/166/143 MHz.
Self refresh mode: standard and low power.
Internal pipelined architecture.
512K word x 16-bit x 2-bank.
Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function.
Individual byte controlled by LDQM and UDQM.
Auto Refresh and Self Refresh.
4096 refresh cycles/64ms.

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Other Datasheets by TMT

T431616B - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Published: Jul 9, 2007 |