T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

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TMT

T431616C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM by TMT - Datasheet Preview — Datasheet preview – T431616C

Datasheet Details

Part number	T431616C
Manufacturer	TMT
File Size	719.12 KB
Description	1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Datasheet	T431616C Datasheet
Additional preview pages of the T431616C datasheet.

Product details

Description

The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle .

Features

3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock.
Burst Read Single-bit Write operation.
DQM for masking.
Auto refresh and self refresh.
32ms refresh period (2K cycle).
MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave).
Availab.

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Other Datasheets by TMT

T431616B - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616E - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Published: Jul 9, 2007 |