Datasheet Details
| Part number | T431616C |
|---|---|
| Manufacturer | TMT |
| File Size | 719.12 KB |
| Description | 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM |
| Datasheet |
 T431616C Datasheet
|
|
|
General Description
The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle .
Key Features
- 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock.
- Burst Read Single-bit Write operation.
- DQM for masking.
- Auto refresh and self refresh.
- 32ms refresh period (2K cycle).
- MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave).
- Availab.