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T431616C - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Description

The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology .

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle .

Features

  • 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock.
  • Burst Read Single-bit Write operation.
  • DQM for masking.
  • Auto refresh and self refresh.
  • 32ms refresh period (2K cycle).
  • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave).
  • Availab.

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Datasheet Details

Part number T431616C
Manufacturer TMT
File Size 719.12 KB
Description 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Datasheet download datasheet T431616C Datasheet

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  • T431616B - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
  • T431616D - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
  • T431616E - 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

Full PDF Text Transcription

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tm • • • • • TE CH T431616C SDRAM FEATURES 3.
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