Datasheet Details
| Part number | 1N914B |
|---|---|
| Manufacturer | TRANSYS |
| File Size | 167.36 KB |
| Description | HIGH SPEED SILICON SWITCHING DIODE |
| Datasheet |
 1N914B Datasheet
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| Part number | 1N914B |
|---|---|
| Manufacturer | TRANSYS |
| File Size | 167.36 KB |
| Description | HIGH SPEED SILICON SWITCHING DIODE |
| Datasheet |
1N914B Datasheet
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SYMBOL VR Reverses Voltage ( Continuous) VRRM Repetitive Peak Reverse Voltage Average Forward Current TA =25ºC IF (AV) IF (AV) TA =150ºC IF Forward Current (D.C.) IFRM Repetitive Peak Forward Current Non Repetitive Peak Surge Current IFSM tp=1sec Ptot Power Dissipation Tstg Storage Temperature Tamb Operating ambient Temperature ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VF Forward Voltage IF=10 IN914/916 IF=100mA, 1N914B IF=5mA, Reverse Breakdown Voltage Reverse Current V(BR)R IR IR=100µA VR= 20V VR= 75V VR= 20V, Tj=150ºC VALUE 75 100 75 10 75 225 500 250 -65 to +200 -65 to +175 UNIT V V mA mA mA mA mA mW ºC ºC MIN TYP MAX 1.0 1.0 0.72 UNIT V V V V nΑ µA 0.62 100 25 5 Diode Capacitance Reverse Recovery Time Cd trr VR=0, f=1MHz IF=10mA to IR=10mA RL=100 Ω Measured at IR=1mA IF=10mA to IR=60mA RL=100 Ω Measured at IR=1mA 2.5 8 pF ns 4 ns Free Datasheet http://www.datasheet4u.com/ IN914, B IN916 250mW DO- 35 Glass Axial Package DO-35 Glass Axial Package A B A DIM A C D B NOTES 1.
Cathode is marked by Band.
2.
Transys Electronics L I M I T E D HIGH SPEED SILICON SWITCHING DIODE IN914, B IN916 250mW DO- 35 Glass Axial.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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1N914B | Silicon Rectifier Diode | NTE |
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1N914B | SWITCHING RECTIFIERS | Digitron Semiconductors |
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1N914B | HIGH SPEED SWITCHING DIODES | EIC |
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1N914B | 500mW 100 Volt Silicon Epitaxial Diodes | MCC |
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1N914B | SIGNAL DIODE | WILLAS |
| Part Number | Description |
|---|---|
| 1N914 | HIGH SPEED SILICON SWITCHING DIODE |