Datasheet Details
| Part number | 2N3439 |
|---|---|
| Manufacturer | TRANSYS |
| File Size | 113.38 KB |
| Description | NPN HIGH VOLTAGE SILICON TRANSISTORS |
| Download | 2N3439 Download (PDF) |
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| Part number | 2N3439 |
|---|---|
| Manufacturer | TRANSYS |
| File Size | 113.38 KB |
| Description | NPN HIGH VOLTAGE SILICON TRANSISTORS |
| Download | 2N3439 Download (PDF) |
|
|
|
SYMBOL 2N3439 VCEO 350 Collector -Emitter Voltage VCBO 450 Collector -Base Voltage VEBO 7.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation@ Ta=25 degC 5.7 Derate Above 25 deg C PD 5.0 Power Dissipation@ Tc=25 degC 28.6 Derate Above 25 deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-a) 175 Junction to Ambient Rth(j-c) 35 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO(sus)* IC=50mA,IB=0 Collector -Emitter Voltage ICBO VCB=360V, IE=0 Collector-Cut off Current VCB=250V, IE=0 ICEO VCE=300V, IB=0 VCE=200V, IB=0 ICEX VCE=450V,VBE=1.5V VCE=300V,VBE=1.5V IEBO VEB=6V, IC=0 Emitter-Cut off Current hFE* IC=2mA,VCE=10V DC Current Gain IC=20mA,VCE=10V IC=50mA,IB=4mA Collector Emitter Saturation Voltage VCE(Sat)* VBE(Sat) * IC=50mA,IB=4mA Base Emitter Saturation Voltage www.DataSheet.net/ 2N3440 250 300 UNITS V V V A A W mW/deg C W mW/deg C deg C deg C/W deg C/W 2N3439 >350 <20 <20 <500 <20 >30 40-160 <0.5 <1.3 2N3440 >250 <20 <50 <500 <20 40-160 <0.5 <1.3 UNITS V uA uA uA uA uA uA uA V V Datasheet pdf - http://www.DataSheet4U.co.kr/ ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N3439/3440 DESCRIPTION SYMBOL TEST CONDITION 2N3439 2N3440 SMALL SIGNAL CHARACTERISTICS hfe IC=5mA, VCE=10V, >25 >25 Small Signal Current Gain.
f=1kHz Cob VCB=10V, IE=0, f=1MHz <10 <10 Output Capacitance Cib VEB=5V, IC=0, f=1MHz <75 <75 Input Capacitance ft IC=10mA, VCE=10V >15 >15 Current Gain-Bandwidth Product f=5MHz Re(hie) VCE-10V, IC=5mA <300 <300 Real Part of Input Impedence f=1MHz *Pulse Test:- Pulse Width =300us, Duty Cycle
Transys Electronics L I M I T E D NPN HIGH VOLTAGE SILICON TRANSISTORS 2N3439 2N3440 TO-39 High Voltage Silicon Planar Transistors used in High Voltage & High Power Amplifier Applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N3439 | SILICON NPN TRANSISTORS | STMicroelectronics |
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2N3439 | HIGH VOLTAGE NPN TRANSISTORS | Seme LAB |
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2N3439 | HIGH VOLTAGE NPN TRANSISTORS | TT |
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2N3439 | NPN LOW POWER SILICON TRANSISTOR | Microsemi |
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2N3439 | Silicon NPN Transistor | NTE |
| Part Number | Description |
|---|---|
| 2N3440 | NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N3773 | NPN SILICON PLANAR POWER TRANSISTOR |