MCR100 SERIES
Silicon Controlled Rectifier
VRRM = 100-600V, IF(RMS) = 0.8A
G
K
A
Symbol
MAXIMUM RATINGS (Tj = 25 OC unless stated otherwise)
Parameter
Repetitive Peak Off-State Voltage
Symbol
MCR100-3 MCR100-4
VRRM
100
200
MCR100-6
400
On-State RMS Current
IT(RMS)
0.8 at tc = 85OC
Peak Non-Repetitive Surge Current
ITSM
10
I 2T for Fusing 8.3ms
I 2 T 0.415
Peak Reverse Gate Voltage
Peak Gate Current
VGRM
IGM
5
0.1
Forward Average Gate Power
PG(AV)
0.1
Forward Peak Gate Power
Maximum Storage Temperature Range
PGM
T(STG)
1.0
-40 to +150
Maximum Junction Temperature Range
Tj
-40 to +110
MCR100-8
600
Unit
Volt
Amp
Amp
A2/S
Volt
Amp
Watt
Watt
OC
OC
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Condition
Min
Peak Forward On-State Voltage
Repetitive Peak Reverse Current
Gate Trigger Voltage
Gate Trigger Current
Latch Current
Holding Current
Thermal Resistance (Junction to Case)
Rate of Rise of Off-State Voltage
Rate of Rise of Off-State Current
VTM
IRRM
VGT
IGT
IL
IH
RTH (J-c)
dV/dt
dA/dt
ITM = 1.0 Amps
VR = VRRM. tJ=110OC
20
Value
Typ
0.62
40
0.60
0.50
35
Max
1.7
100
0.80
200
10.0
5.0
75
50
Unit
Volt
Volt
µA
mA
mA
OC/W
V/µS
A/µS
Mechanical Outline
0.205(5.20) max
0.175 (4.45) min
0.165(4.19) max
0.125(3.18) min
1 23
Cathode Gate Anode
Case:TO - 92
123
0.210(5.33) max
0.170 (4.32) min
0.500(12.70) min
0.055(1.39) max
0.045 (1.15) min
0.055(1.39) max
0.045 (1.15) min
0.021(50.533) max
0.016 (0.407) min
0.135(3.43) min
All Dimensions in Inches (Millimeters)
Third Angle Projection
0.105(2.66) max
0.080(2.04) min
