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2N5681 - PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

Download the 2N5681 datasheet PDF. This datasheet also covers the 2N5680 variant, as both devices belong to the same pnp/npn high voltage silicon transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

SYMBOL 2N5679 2N5681 100 100 2N5680 2N5682 120 120 UNITS V V V A A W mW/deg C W mW/deg C deg C VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation @Ta=25 degC 5.7 Derate Above 25

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Note: The manufacturer provides a single datasheet file (2N5680_TRANSYSElectronicsLimited.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N5681
Manufacturer TRANSYS Electronics Limited
File Size 93.01 KB
Description PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
Datasheet download datasheet 2N5681 Datasheet

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Part Number Description
2N5682 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Transys Electronics L I M I T E D PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5681 100 100 2N5680 2N5682 120 120 UNITS V V V A A W mW/deg C W mW/deg C deg C VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation @Ta=25 degC 5.7 Derate Above 25deg C PD 10 Power Dissipation @Tc=25 degC 57 Derate Above 25deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) 17.