DESCRIPTION
: A Silicon epitaxial NPN planer transistor in a TO-39 type package designed for use as drivers for high Power transistors in general purpose amplifier and switching circuits. Collector 3 2 Base 1 Emitter MAXIMUM RATINGS
: Characteristic Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Base Current Total Device Dissipation Total Device Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol VCEO (IE = 0), VCBO (IC = 0), VEBO IC IB (TC = +25°C), Ptot (TA = +25°C), Ptot TJ Tstg RthJC RthJA Rating 100 4 1 500 10 1 -65 to +200 -65 to +200 17.4 175 Unit V A mA W °C °C/W Page <1> 23/04/13 V1.0 Bipolar Transistor ELECTRICAL CHARACTERISTICS
: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min ICBO VCB = 100V, IE = 0 Collector Cutoff Current ICEO VCE = 70V, IB = 0 ICEV VCE = 100V, VBE = -1.5V - VCE = 100V, VBE = -1.5V ,TC = +1...
Multicomp
