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2N5681 - PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS

This page provides the datasheet information for the 2N5681, a member of the 2N5679 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS family.

Datasheet Summary

Description

SYMBOL 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 Collector -Base Voltage VCBO 100 120 Emitter -Base Voltage VEBO 4.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation @Ta=25 degC PD 1.0 Derate Above 25deg C 5.7 Power Dissi

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Datasheet Details

Part number 2N5681
Manufacturer CDIL
File Size 135.80 KB
Description PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
Datasheet download datasheet 2N5681 Datasheet
Additional preview pages of the 2N5681 datasheet.

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Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 Collector -Base Voltage VCBO 100 120 Emitter -Base Voltage VEBO 4.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation @Ta=25 degC PD 1.0 Derate Above 25deg C 5.7 Power Dissipation @Tc=25 degC PD 10 Derate Above 25deg C 57 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 17.
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