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TMAN16N60 - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • JEDEC Qualification BVDSS 600V TMAN16N60 N-channel MOSFET ID RDS(on) 16A < 0.47W Device TMAN16N60 Package TO-3PN Marking TMAN16N60 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanc.

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Datasheet preview – TMAN16N60

Datasheet Details

Part number TMAN16N60
Manufacturer TRinno
File Size 443.68 KB
Description N-channel MOSFET
Datasheet download datasheet TMAN16N60 Datasheet
Additional preview pages of the TMAN16N60 datasheet.

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Full PDF Text Transcription

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 600V TMAN16N60 N-channel MOSFET ID RDS(on) 16A < 0.
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