TMAN16N60A Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - Halogen free package - JEDEC Qualification BVDSS 600V N-channel MOSFET ID RDS(on) 16A < 0.47W Device TMAN16N60A Package TO3PN Marking TMAN16N60A Remark Ro HS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Symbol VDSS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol Rq JC Rq JA October 2012 : Rev0 .trinnotech. TMAN16N60A 600 ±30 16 9.97 64 194 16 29 290 2.32 4.5 -55~150 300 TMAN16N60A 0.43...