TMAN12N80AZ - N-channel MOSFET

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
JEDEC Qualification.
Improved ESD performance BVDSS 800V TMAN12N80AZ N-channel MOSFET ID RDS(on) 12A < 0.65W Device TMAN12N80AZ Package TO-3PN Marking TMAN12N80AZ Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetit.

TMAN12N80AZ n-channel mosfet by TRinno - Datasheet Preview

Datasheet Details

Part number	TMAN12N80AZ
Manufacturer	TRinno
File Size	494.85 KB
Description	N-channel MOSFET
Datasheet	TMAN12N80AZ Datasheet

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance BVDSS 800V TMAN12N80AZ N-channel MOSFET ID RDS(on) 12A < 0.