TMAN13N50 - N-channel MOSFET

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
JEDEC Qualification BVDSS 500V TMAN13N50 N-channel MOSFET ID RDS(on) 13A < 0.48W Device TMAN13N50 Package TO-3PN Marking TMAN13N50 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanc.

TMAN13N50 n-channel mosfet by TRinno - Datasheet Preview

Datasheet Details

Part number	TMAN13N50
Manufacturer	TRinno
File Size	479.62 KB
Description	N-channel MOSFET
Datasheet	TMAN13N50 Datasheet

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification BVDSS 500V TMAN13N50 N-channel MOSFET ID RDS(on) 13A < 0.