TMAN11N90AZ - N-channel MOSFET

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
JEDEC Qualification.
Improved ESD performance BVDSS 900V TMAN11N90AZ N-channel MOSFET ID RDS(on) 11A < 0.9W Device TMAN11N90AZ Package TO-3PN Marking TMAN11N90AZ Remark RoHS Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetiti.

TMAN11N90AZ n-channel mosfet by TRinno - Datasheet Preview

Datasheet Details

Part number	TMAN11N90AZ
Manufacturer	TRinno
File Size	498.70 KB
Description	N-channel MOSFET
Datasheet	TMAN11N90AZ Datasheet

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification  Improved ESD performance BVDSS 900V TMAN11N90AZ N-channel MOSFET ID RDS(on) 11A < 0.