Datasheet Summary
Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
- JEDEC Qualification
VDSS = 880 V @Tjmax ID = 10A RDS(on) = 1.05 W(max) @ VGS= 10 V
Device TMAN10N80
Package TO-3P
Marking...
- Part: TMAN10N80
- Description: N-channel MOSFET
- Manufacturer: TRinno
- Size: 482.97 KB
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