TMAN10N80 - N-channel MOSFET

Key Features

Low gate charge.
100% avalanche tested.
Improved dv/dt capability.
RoHS compliant.
JEDEC Qualification TMAN10N80 VDSS = 880 V @Tjmax ID = 10A RDS(on) = 1.05 W(max) @ VGS= 10 V D G Device TMAN10N80 Package TO-3P Marking TMAN10N80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Re.

TMAN10N80 n-channel mosfet by TRinno - Datasheet Preview

Datasheet Details

Part number	TMAN10N80
Manufacturer	TRinno
File Size	482.97 KB
Description	N-channel MOSFET
Datasheet	TMAN10N80 Datasheet

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification TMAN10N80 VDSS = 880 V @Tjmax ID = 10A RDS(on) = 1.