TMAN16N60 Datasheet | TRinno

Features - Low gate charge - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant - JEDEC Qualification BVDSS 600V N-channel MOSFET ID RDS(on) 16A < 0.47W Device TMAN16N60 Package TO-3PN Marking TMAN16N60 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds - Limited only by maximum junction temperature Symbol VDS VGS IDM EAS IAR EAR PD dv/dt TJ, TSTG Thermal Characteristics Parameter Maximum Thermal resistance, Junction-to-Case Maximum Thermal resistance, Junction-to-Ambient Symbol Rq JC Rq JA April 2014 : Rev0.1 .trinnotech. TMAN16N60 600 ±30 16 10.3 64 865 16 31.2 312 2.5 4.5 -55~150 300 TMAN16N60 0.4 62.5 Remark Ro HS Unit V V A A A m J A m J...