TMPF16N25ZG
Features
- Low gate charge
- 100% avalanche tested
- Improved dv/dt capability
- Ro HS pliant
- Halogen free package
- JEDEC Qualification
TMP16N25Z(G)/TMPF16N25Z(G)
BVDSS 250V
N-channel MOSFET ID RDS(on) 16A <0.24W
Device TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG
Package TO-220 / TO-220F TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1)
TC = 25 ℃ TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃ Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
- Limited only by maximum junction temperature
Marking TMP16N25Z / TMPF16N25Z TMP16N25ZG / TMPF16N25ZG
Remark Ro HS
Halogen Free
Symbol VDSS VGS
IDM EAS IAR EAR
PD dv/dt TJ,...
