Datasheet4U Logo Datasheet4U.com

TMU2N65AZ - N-channel MOSFET

Features

  • Low gate charge.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS compliant.
  • Halogen free package.
  • JEDEC Qualification.
  • Improved ESD performance D-PAK TMD2N65AZ(G)/TMU2N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 1.8A < 4.6W I-PAK Device TMD2N65AZ / TMU2N65AZ TMD2N65AZG / TMU2N65AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Not.

📥 Download Datasheet

Datasheet preview – TMU2N65AZ

Datasheet Details

Part number TMU2N65AZ
Manufacturer TRinno
File Size 438.64 KB
Description N-channel MOSFET
Datasheet download datasheet TMU2N65AZ Datasheet
Additional preview pages of the TMU2N65AZ datasheet.

📁 Similar Datasheet

  • TMU2N50HF - N-Channel Trench MOSFET (Unigroup)
  • TMU3100MS - USB Controller (tenx technology)
  • TMU3101MS - General Purpose USB Controller (tenx technology)
  • TMU3102MS - USB Controller (tenx technology)
  • TMU3111 - USB Full Speed Controller (Tenx)
  • TMU3112 - USB Full Speed Controller (tenx technology)
  • TMU3112MS - USB Full Speed Controller (tenx technology)
  • TMU3113MS - USB Full Speed Controller (tenx technology)
  • TMU3114MS - USB Full Speed Controller (tenx technology)
  • TMU3130 - USB Microcontroller (tenx technology)
Other Datasheets by TRinno

Full PDF Text Transcription

Click to expand full text
Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD2N65AZ(G)/TMU2N65AZ(G) BVDSS 650V N-channel MOSFET ID RDS(on) 1.8A < 4.
Published: |