2N4912 - SILICON EPITAXIAL NPN TRANSISTOR

Datasheet Details

Part number	2N4912
Manufacturer	TT Electronics
File Size	83.26 KB
Description	SILICON EPITAXIAL NPN TRANSISTOR
Datasheet	2N4912 Datasheet
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SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector - Base Voltage 80V VCEO Collector - Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 1.0A IB Base Current 1.0A PD Total Power Dissipation at Tc = 25°C 25W Derate Above 25°C 0.143W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max.

Published: May 17, 2017 |