| Part Number | 2N4912 Datasheet |
|---|---|
| Manufacturer | NTE Electronics |
| Overview |
The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600m.
D Low Collector *Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector *Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |
2N4912 Datasheet and Specifications PDF
The 2N4912 is a Silicon NPN Transistor.
| Part Number | 2N4912 Datasheet |
|---|---|
| Description | Medium-power NPN silicon transistors |
| Manufacturer | Motorola Semiconductor |
| Overview |
2N4910 thru 2N4912 (SILICON)
~ ~ CASE 80
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| Part Number | 2N4912 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistors |
| Manufacturer | SavantIC |
| Overview | ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4912 complement to type 2N4900 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications P. fication Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4910 VCEO(SUS) Collector-emitter sustaining voltage 2N4911 2N4912 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4910 ICEO Collector . |
| Part Number | 2N4912 Datasheet |
|---|---|
| Description | SILICON NPN TRANSISTORS |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and . 0V, IC=500mA 20 hFE VCE=1.0V, IC=1.0A 10 hfe VCE=10V, IC=250mA, f=1.0kHz 25 fT VCE=10V, IC=250mA, f=1.0MHz 3.0 Cob VCB=10V, IE=0, f=100kHz MAX 100 100 1.0 500 1.0 0.6 1.3 1.3 100 100 UNITS V V V A A W °C °C/W UNITS μA μA mA μA mA V V V V MHz pF R1 (2-September 2014) 2N4912 SILICON NPN P. |