| Part Number | 2N4912 Datasheet |
|---|---|
| Manufacturer | NTE Electronics |
| Overview |
The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications.
Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600m.
D Low Collector *Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector *Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |