2N4912 Datasheet and Specifications PDF

The 2N4912 is a Silicon NPN Transistor.

Datasheet4U Logo
Part Number2N4912 Datasheet
ManufacturerNTE Electronics
Overview The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 600m. D Low Collector
*Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A D Excellent safe Operating Area D Gain Specified to IC = 1A Absolute Maximum Ratings: Collector
*Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
Part Number2N4912 Datasheet
DescriptionMedium-power NPN silicon transistors
ManufacturerMotorola Semiconductor
Overview 2N4910 thru 2N4912 (SILICON) ~ ~ CASE 80 -
Part Number2N4912 Datasheet
DescriptionSilicon NPN Power Transistors
ManufacturerSavantIC
Overview ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4912 complement to type 2N4900 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications P. fication Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N4910 VCEO(SUS) Collector-emitter sustaining voltage 2N4911 2N4912 VCEsat VBEsat VBE Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N4910 ICEO Collector .
Part Number2N4912 Datasheet
DescriptionSILICON EPITAXIAL NPN TRANSISTOR
ManufacturerTT Electronics
Overview SILICON EPITAXIAL NPN TRANSISTOR 2N4912 • Low Saturation Voltage Transistor In A Hermetic Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Availa. errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab.co.uk Website: http.