Datasheet4U.com

2N4912 Datasheet PDF

TT 2N4912

SILICON EPITAXIAL NPN TRANSISTOR

Part No. 2N4912
Datasheet 2N4912 Download
Manufacturer
TT
Description SILICON EPITAXIAL NPN TRANSISTOR
Buy Stock & Price
2N4912 datasheet page 1 preview

APPLICATIONS

● Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated) VCBO Collector - Base Voltage 80V VCEO Collector - Emitter Voltage 80V VEBO Emitter – Base Voltage 5V IC Continuous Collector Current 1.0A IB Base Current 1.0A PD Total Power Dissipation at Tc = 25°C 25W Derate Above 25°C 0.143W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 7 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershir...
2N4912 page 2 preview 2N4912 page 3 preview