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2N4912 - SILICON NPN TRANSISTORS

General Description

The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications.

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2N4912 SILICON NPN POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4912 is a silicon NPN power transistor manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC 80 80 5.0 1.0 1.0 25 -65 to +200 7.0 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=80V ICEV VCE=80V, VEB=1.