The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P-CHANNEL POWER MOSFET
IRFF9130 / 2N6849
MOSFET Transistor in a Hermetic Metal TO-205AF Package Designed For Switching, Power Supply, Motor Control and Amplifier Applications High Reliability and Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain - Source Voltage
VGS
Gate - Source Voltage
ID
Continuous Drain Current @ TC = 25°C
ID IDM(1)
Continuous Drain Current @ TC = 100°C Pulsed Drain Current
PD
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
TJ
Junction Temperature Range
Tstg
Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 380µs, δ ≤ 2% (3) By Design Only, N
2N6849 Datasheet
