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2N6849 Datasheet Preview

2N6849 Datasheet

P-CHANNEL POWER MOSFET

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P-CHANNEL POWER MOSFET
IRFF9130 / 2N6849
MOSFET Transistor in a Hermetic Metal TO-205AF Package
Designed For Switching, Power Supply, Motor Control and Amplifier Applications
High Reliability and Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain - Source Voltage
VGS Gate - Source Voltage
ID Continuous Drain Current @ TC = 25°C
ID
IDM(1)
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current
PD Total Power Dissipation @ TC = 25°C
Derate Above 25°C
TJ Junction Temperature Range
Tstg Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC Thermal Resistance, Junction To Case
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width ≤ 380µs, δ ≤ 2%
(3) By Design Only, Not A Production Test.
-100V
±20V
-5.8A
-3.7A
-25A
20.833W
0.167W/°C
-55 to +150°C
-55 to +150°C
Max.
6
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab
assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that
datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Email: lutterworth.sales@ttelectronics.com Website: http://ttelectronics.com
Semelab
Document Number: DOC 3098
Issue: 3
Page: 1 of 3




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2N6849 Datasheet Preview

2N6849 Datasheet

P-CHANNEL POWER MOSFET

No Preview Available !

P-CHANNEL POWER MOSFET
IRFF9130 / 2N6849
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)DSS
Drain - Source Breakdown
Voltage
VGS = 0V
ID = -0.25mA
RDS(on)(2)
Static Drain - Source On -
State Resistance
VGS = -10V
VGS = -10V
ID = -3.7A
TA = 125°C
ID = -5.8A
Min. Typ. Max. Units
-100 V
0.3
0.54 Ω
0.32
VDS = VGS ID = -250µA
-2
-4
VGS(th) Gate Threshold Voltage
TA = 125°C
-1.0
V
TA = -55°C
-5
gfs
Forward Transconductance VDS -5V IDS = -3.7A
2.5
7.5 S(ʊ)
IDSS
Zero Gate Voltage Drain
Current
VGS = 0
VDS = 0.8BVDSS
TA = 125°C
100
µA
500
IGSS Gate - Source Leakage VGS = ±20V
TA = 125°C
±100
±200
nA
DYNAMIC CHARACTERISTICS (TC = 25°C unless otherwise stated)
Ciss Input Capacitance
Coss Output Capacitance
Crss
Reverse Transfer
Capacitance
VDS = -25V
VGS = 0V
f = 1.0MHz
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = -50V
ID = -5.8A
RG = 7.5Ω
845
373
92
60
140
140
140
pF
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
trr(3)
Reverse Recovery Time
IS = -5.8A
VDD -50V
VSD
Diode Forward Voltage
IS = -5.8A
VGS = 0
TJ = 25°C
di/dt = 100A/µs
TJ = 25°C
250 ns
-4.3 V
Semelab Limited
Telephone: +44 (0) 1455 556565
Fax: +44 (0) 1455 552612
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Email: lutterworth.sales@ttelectronics.com Website: http://ttelectronics.com
Semelab
Document Number: DOC 3098
Issue: 3
Page: 2 of 3


Part Number 2N6849
Description P-CHANNEL POWER MOSFET
Maker TT
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