2N6849 Datasheet PDF

MECHANICAL DATA

Dimensions in mm (inches) SEME 2N6849 P–CHANNEL POWER MOSFETs VDSS ID(cont) RDS(on)

FEATURES

● Single pulse avalanche energy rated
● SOA is power dissipation limited
● Nanosecond switching speeds
● Linear transfer characteristics
● High input impedance 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . 4 .1 9 (0 .1 6 5 ) 4 .9 5 (0 .1 9 5 ) 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 2 .5 4 (0 .1 0 0 ) - 100V - 6.5A 0.30W 1 2 .7 0 (0 .5 0 0 ) m in . 4 5 ° TO–39 METAL PACKAGE Underside View Pin 2 = Base Pin 3 = Collector Pin 1 = Emitter

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) VGS VDS VDG ID IDM EAS PD TJ , TSTG RqJC RqJA Gate – Source Voltage* Drain – Source Voltage* Drain – Gate Voltage (RGS = 20kW)* Continuous Drain Current @ TC = 25°C* @ TC = 100°C* Pulsed Drain Current2* Single Pulse Avalanche...