| Part number | 2N6849 |
|---|---|
| Datasheet | 2N6849-TT.pdf |
| File Size | 472.29 KB |
| Manufacturer | TT Electronics |
| Description | P-CHANNEL POWER MOSFET |
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Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 380µs, δ ≤ 2% (3) By Design Only, Not A Production Test. 6 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2N6849 | P-CHANNEL POWER MOSFET | Seme LAB |
 |
2N6849 | P-Channel MOSFET | Microsemi |
See all TT Electronics datasheets
| Part Number | Description |
|---|---|
| 2N6851 | P-CHANNEL POWER MOSFET |
| 2N6059 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| 2N6277 | SILICON MULTI-EPITAXIAL NPN TRANSISTOR |
| 2N6659X | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 2N6660 | N-Channel Enhancement Mode Power MOSFET |
| 2N6661 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 2N6796 | N-CHANNEL POWER MOSFET |
| 2N697 | GENERAL PURPOSE SILICON NPN TRANSISTOR |
