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HCT802 - Dual Enhancement Mode MOSFET

General Description

HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package.

The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.

Key Features

  •  6 pad surface mount package.
  •  VDS = 90V.
  •  RDS(on) < 5Ω.
  •  ID(on) N-Channel = 1.5A | P-Channel = 1.1A.
  •  Two devices selected for VDS ID(on) and RDS(on) similarity.
  •  Full TX Processing Available.
  •  Gold plated contacts.

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Other Datasheets by TT Electronics

Part Number Description
HCT802TX Dual Enhancement Mode MOSFET
HCT802TXV Dual Enhancement Mode MOSFET
HCT70000MTX N-Channel Enhancement Mode MOS Transistor
HCT7000M N-Channel Enhancement Mode MOS Transistor
HCT7000MTXV N-Channel Enhancement Mode MOS Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features:  6 pad surface mount package  VDS = 90V  RDS(on) < 5Ω  ID(on) N-Channel = 1.5A | P-Channel = 1.1A  Two devices selected for VDS ID(on) and RDS(on) similarity  Full TX Processing Available  Gold plated contacts Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.  These two enhancement mode  MOSFETS are par cularly well matched for VDS, IDS(on), RDS(on) and Gfs.   TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.  TX products receive a VGS HTRB at 24 V for 48 hrs.