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HCT802TX - Dual Enhancement Mode MOSFET

This page provides the datasheet information for the HCT802TX, a member of the HCT802 Dual Enhancement Mode MOSFET family.

Description

HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package.

The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.

Features

  •  6 pad surface mount package.
  •  VDS = 90V.
  •  RDS(on) < 5Ω.
  •  ID(on) N-Channel = 1.5A | P-Channel = 1.1A.
  •  Two devices selected for VDS ID(on) and RDS(on) similarity.
  •  Full TX Processing Available.
  •  Gold plated contacts.

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Datasheet preview – HCT802TX

Datasheet Details

Part number HCT802TX
Manufacturer TT Electronics
File Size 248.37 KB
Description Dual Enhancement Mode MOSFET
Datasheet download datasheet HCT802TX Datasheet
Additional preview pages of the HCT802TX datasheet.

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Full PDF Text Transcription

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Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features:  6 pad surface mount package  VDS = 90V  RDS(on) < 5Ω  ID(on) N-Channel = 1.5A | P-Channel = 1.1A  Two devices selected for VDS ID(on) and RDS(on) similarity  Full TX Processing Available  Gold plated contacts Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.  These two enhancement mode  MOSFETS are par cularly well matched for VDS, IDS(on), RDS(on) and Gfs.   TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.  TX products receive a VGS HTRB at 24 V for 48 hrs.
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