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HCT802TX Datasheet Dual Enhancement Mode MOSFET

Manufacturer: TT Electronics

Overview: Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.  These two enhancement mode  MOSFETS are par cularly well matched for VDS, IDS(on), RDS(on) and Gfs.

  TX and TXV devices are processed to OPTEK’s military screening program pa erned a er MIL‐PRF‐19500.  TX products receive a VGS HTRB at 24 V for 48 hrs. at 150° C and a VDS HTRB at 48 V for 260 hrs.at 150° C.    Applications:  Drivers: Solid State Relays, Lam

Key Features

  •  6 pad surface mount package.
  •  VDS = 90V.
  •  RDS(on) < 5Ω.
  •  ID(on) N-Channel = 1.5A | P-Channel = 1.1A.
  •  Two devices selected for VDS ID(on) and RDS(on) similarity.
  •  Full TX Processing Available.
  •  Gold plated contacts.

More Datasheets from TT Electronics

Part Number Description
HCT802TXV Dual Enhancement Mode MOSFET
HCT802 Dual Enhancement Mode MOSFET
HCT70000MTX N-Channel Enhancement Mode MOS Transistor
HCT7000M N-Channel Enhancement Mode MOS Transistor
HCT7000MTXV N-Channel Enhancement Mode MOS Transistor

HCT802TX Distributor