HCT802 Datasheet | TT Electronics

Dual Enhancement Mode MOSFET HCT802, HCT802TX, HCT802TXV Features : -  6 pad surface mount package -  VDS = 90V -  RDS(on) < 5Ω -  ID(on) N-Channel = 1.5A | P-Channel = 1.1A -  Two devices selected for VDS ID(on) and RDS(on) similarity -  Full TX Processing Available -  Gold plated contacts Description: HCT802 offers an N‐Channel and P‐Channel MOS transistor in a herme c ceramic surface mount package. The devices used  are similar to industry standards 2N6661 N‐Channel device and VP1008 P‐Channel device.  These two enhancement mode  MOSFETS are par cularly well matched for VDS, IDS(on), RDS(on) and Gfs.   TX and TXV devices are processed to OPTEK’s military screening program pa erned a er...