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OP913SL Datasheet Preview

OP913SL Datasheet

PIN Silicon Photodiode

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PIN Silicon Photodiode
OP913 Series
Features:
TO-05 herme cally sealed package
Linear response vs. irradiance
Fast switching me
Narrow receiving angle
Enhanced temperature range
OP913SL
OP913WSL
Description:
OP913SL and OP913WSL consist of a PIN silicon photodiode mounted in a two-leaded TO-05 herme cally sealed package.
OP913SL has a dome lens with an acceptance angle of 10° when measured from the op cal axis to the half power point.
OP913WSL has a at lens with an acceptance half angle of 30°. This large ac ve area allows very low light level detec on.
Please refer to Applica on Bulle ns 208 and 210 for addi onal design informa on and reliability (degrada on) data.
Applications:
Non-contact reec ve object sensor
Assembly line automa on
Machine automa on
Machine safety
End of travel sensor
Door sensor
Part Number
OP913SL
OP913WSL
Ordering Information
Sensor Viewing Angle
Photodiode
20°
80°
Lead Length
0.50”
OP913SL, OP913WSL
OP913SL, OP913WSL
1
2
Pin#
1
2
Sensor
Cathode
Anode
RoHS
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
DIMENSIONS ARE IN:
[MILLIMETERS]
INCHES
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A 08/2016 Page 1




TT

OP913SL Datasheet Preview

OP913SL Datasheet

PIN Silicon Photodiode

No Preview Available !

PIN Silicon Photodiode
OP913 Series
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range
Operating Temperature Range
Reverse Voltage
Lead Soldering Temperature [ 1/16 inch (1.6 mm) from the case for 5 seconds with soldering
iron]
Power Dissipation
-65°C to +150°C
-65°C to +125°C
32 V
260°C(1)
150 mW(2)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP
Reverse Light Current:
IL OP913SL
OP913WSL
120 -
40 -
ID Reverse Dark Current
--
Open Circuit Voltage:
VCC OP913SL
OP913WSL
- 400
- 300
Short Circuit Current:
ISC OP913SL
OP913WSL
120 -
40 -
VBR
CT
tON, tOFF
Reverse Breakdown Voltage
Total Capacitance
Turn On / Turn Off Time
32 -
--
- 50
MAX
-
-
25
-
-
-
-
-
150
-
UNITS
TEST CONDITIONS
μA VR = 5 V, EE = 5 mW/cm2 (3)(4)
nA VR = 10 V, EE = 0(3)
mW EE = 5 mW/cm2(4)
V EE = 5 mW/cm2(4)
V EE = 100 µA
pF VR = 0, EE = 0, F = 1 MHz
ns VR = 10 V, RL = 1 k
Notes:
(1) RMA ux is recommended. Dura on can be extended to a maximum of 10 seconds when ow soldering.
(2) Derate linearly 1.5 mW/° C above 25° C.
(3) Junc on temperature for all devices in this data sheet is maintained at 25° C.
(4) Light source is an unltered tungsten bulb opera ng at CT = 2870 K or equivalent infrared source.
(5) At any par cular wavelength the ux responsively, Rθ is related to quantum eciency by: Rθ = ηq (λ/1240), where ηq is the quantum
eciency in electrons per photon and λ is the wavelength in nanometers; thus at 900 nm, 0.60 A/W corresponds to a quantum eciency
of 83%.
(6) NEP is the radiant ux at a specied wavelength, required for unity signal-to-noise ra o normalized for bandwidth. NEP calcula on is made
using responsivity at peak sensi vity wavelength, with spot noise measurement at 1000 Hz in a noise bandwidth of 6 Hz. (λ, f, f) = (λp,
1000 Hz, 6 Hz).
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue A 08/2016 Page 2


Part Number OP913SL
Description PIN Silicon Photodiode
Maker TT
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