MBR10L100CT Datasheet - Taiwan Semiconductor

Dual Common Cathode Schottky Rectifier

MBR10L100CT Features

* - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammabili

MBR10L100CT General Description

Green compound AEC-Q101 qualified PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM FORWARD SURGE CURRENT 175 8.3ms Single Half Sine Wave 150 JEDEC Method 125 100 75 50 25 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 FORWARD CURRENT (A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 10 TJ=125℃ 1 TJ=25.

MBR10L100CT Datasheet (194.96 KB)

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MBR10L100CT

Manufacturer:

Taiwan Semiconductor

File Size:

194.96 KB

Description:

Dual common cathode schottky rectifier.

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MBR10L100CT Dual Common Cathode Schottky Rectifier Taiwan Semiconductor

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MBR10L100CT Features

MBR10L100CT General Description

Datasheet Details

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