MBR20L100CT thru MBR20L120CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
MBR20L100CT
MBR20L120CT
Maximum repetitive peak reverse voltage
VRRM
100
120
Maximum RMS voltage
Maximum DC blocking voltage
VRMS
VDC
70
100
84
120
Maximum average forward rectified current
IF(AV)
20
Peak repetitive forward current
(Rated VR, Square Wave, 20KHz)
IFRM
20
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF= 10A, TJ=25℃
IF= 10A, TJ=125℃
IF= 20A, TJ=25℃
IF= 20A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1
TYP MAX TYP MAX
0.72 0.75 0.78 0.83
0.58 0.68 0.63 0.72
0.81 0.85 0.86 0.90
0.67 0.75 0.73 0.80
TYP MAX TYP MAX
1.10 20 1.00 20
1.20 15 1.40 10
10000
2.8 3.0
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
A
A
V
μA
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308038
Version: G13
