MBRF735 thru MBRF7150
Taiwan Semiconductor
CREAT BY ART
Isolated Schottky Barrier Rectifiers
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: ITO-220AC
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.7 g (approximately)
ITO-220AC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
MBRF MBRF MBRF MBRF MBRF MBRF
SYMBOL
735 745 750 760 790 7100
Maximum repetitive peak reverse voltage
VRRM 35 45 50 60 90 100
Maximum RMS voltage
VRMS
24 31 35 42 63 70
Maximum DC blocking voltage
VDC 35 45 50 60 90 100
Maximum average forward rectified current
IF(AV)
7.5
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
15
MBRF
7150
150
105
150
UNIT
V
V
V
A
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=7.5A, TJ=25℃
IF=7.5A, TJ=125℃
IF=15A, TJ=25℃
IF=15A, TJ=125℃
Maximum reverse current @ Rated VR TJ=25 ℃
TJ=125 ℃
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IFSM
IRRM
VF
IR
dV/dt
RθJC
TJ
TSTG
1.0
-
0.57
0.84
0.72
15
150
0.5
0.75
0.65
-
-
0.1
10
10000
7
- 55 to +150
- 55 to +175
0.92
0.82
-
-
5
A
A
1.02
0.92 V
-
-
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1309005
Version: I13
