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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

RB500V-40 Datasheet

Low VF SMD Schottky Barrier Diode

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Small Signal Product
Low VF SMD Schottky Barrier Diode
FEATURES
- Low power loss, high current capability, low VF
- Surface mount device type
- Moisture sensitivity level (MSL): 1
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-323F
RB500V-40
Taiwan Semiconductor
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed : 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 4.85 ± 0.5 mg
- Marking Code: S9
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Peak Reverse Voltage
VRM
45
Reverse Voltage
VR 40
Mean Forward Current
IO 0.1
Non-Repetitive Peak Forward Surge Current
60Hz for 1 Cyc.
IFSM
1.0
Thermal Resistance (Junction to Ambient)
(Note)
RθJA
500
Junction and Storage Temperature Range
TJ ,TSTG
-40 to +125
PARAMETER
Reverse Breakdown Voltage
IR = 100 μA
Forward Voltage
IF = 10 mA
Reverse Leakage Current
VR = 10 V
Junction Capacitance
VR = 10V , f = 1.0 MHz
Note: Valid provided that electrodes are kept at ambient temeprature.
SYMBOL
V(BR)
VF
IR
CJ
MIN
45
-
-
-
MAX
-
0.45
1
6.0
UNIT
mW
V
V
A
A
oC/W
oC
UNIT
V
V
μA
pF
Document Number: DS_S1412013
Version: C14


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

RB500V-40 Datasheet

Low VF SMD Schottky Barrier Diode

No Preview Available !

Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
120
100
80
60
40
20
0
0
Fig. 1 Forward Current Derating Curve
25 50 75 100 125 150
TA, Ambient Temperature (oC)
RB500V-40
Taiwan Semiconductor
Fig. 2 Typical Forward Characteristics
100
10
TA=125°C
TA=75°C
TA=25°C
1 TA=-25°C
0.1
0
200 400 600 800
VF, Instantaneous Forward Voltage (V)
1000
1000
100
10
1
0.1
0.01
0
Fig. 3 Typical Reverse Characteristics
TA=125°C
TA=75°C
TA=25°C
10 20 30
VR, Instantaneous Reverse Voltage (V)
40
Fig. 4 Total Capacitance VS. Reverse
100
f=1MHz
10
1
0
5 10 15 20 25 30 35 40
VR, Reverse Voltage (V)
Document Number: DS_S1412013
Version: C14


Part Number RB500V-40
Description Low VF SMD Schottky Barrier Diode
Maker Taiwan Semiconductor
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RB500V-40 Datasheet PDF






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