TS4448RZ Datasheet | Taiwan Semiconductor

TS4448 RZ 150m W High Speed SMD Switching Diode Small Signal Diode Features BV —Designed for mounting on small surface. —Extremely thin/leadless package —High mounting capability,strong surage with stand, high reliability. —Pb free version and Ro HS pliant —Green pound (Halogen free) with suffix "G" on packing code and prefix "G" on date code E Dimensions A B C D E Unit (mm) Min 1.60 0.80 0.70 Typ. Typ. Max 1.80 1.00 0.85 0.45 0.70 Unit (inch) Min Max 0.063 0.071 0.031 0.039 0.027 0.033 Typ. Typ. 0.018 0.028 Mechanical Data —Case :0603 standard package, molded plastic —Terminal: Gold plated, solderable per MIL-STD-750, method 2026 guaranteed —High temperature soldering guaranteed: 260 °C/10s —Polarity : Indicated by cathode band —Weight : 0.003 gram (approximately) Ordering Information Part No. TS4448 RZ Package 0603 Packing 4Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Non-Repetitive Peak Forward Surge Current Pulse Width= Pulse Width= 1 μsec IFSM RθJA TJ, TSTG 2.0 1.0 666 -40 to + 125 °C/W °C A 8.3 msec Symbol PD VRRM IFRM IO Value 150 100 300 125 Units m W V m A m A Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current IF= IF= VR= VR= (Note3) (Note 2) 5m A 100m A 20V 80V Symbol V(BR) VF IR CJ Trr Min 0.62 Max 80 0.72 1.00 25 100 9.0 9 Units V V n A p F ns .. Junction Capacitance Reverse Recovery Time VR=0.5, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : I R=100μA Notes:3. Test Condition : I F=IR=10m A, RL=100Ω, IRR=1m A Version : C09 TS4448 RZ 150m W High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1...