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TSG15N120CN - N-Channel IGBT

Description

The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features

  • 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG15N120CN C0 Package TO-3PN Packing 30pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current.
  • Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature.

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Full PDF Text Transcription

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TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES (V) 1200 VGES (V) ±20 IC (A) 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Features ● ● ● 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No.
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