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TSG40N120CE
N-Channel IGBT with FRD.
TO-264
Pin Definition: 1. Gate 2. Collector 3. Emitter
PRODUCT SUMMARY VCES (V)
1200
VGES (V)
±20
IC (A)
40
General Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
Features
● ● ● 1200V NPT Trench Technology High Speed Switching Low Conduction Loss
Block Diagram
Ordering Information
Part No.